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Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J
| Place of Origin | CHINA |
|---|---|
| Brand Name | THINKCHIP |
| Model Number | ES2A ES2B ES2C ES2D ES2E ES2G ES2J |
| Minimum Order Quantity | 100PCS |
| Price | negotiable |
| Packaging Details | Tape & Reel (TR) / Cut Tape (CT) |
| Delivery Time | 1-2 WORK DAYS |
| Payment Terms | T/T, Western Union,paypal, MoneyGram |
| Supply Ability | 9,900,000 pcs/weekly |
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xProduct Details
| TYPE | ES2A | Package | SMB |
|---|---|---|---|
| IR(uA) | 5uA | VF(V) | 0.95V |
| VRRM(V) | 50V | IFSM(A) | 50A |
| Trr(ns) | 35NS | IO(A) | 2A |
| Highlight | fast recovery rectifier diode,high power rectifier diode |
||
Product Description
ES2A ES2B ES2C ES2D ES2E ES2G ES2J Fast Recorvery Diode SMB DO-214AA
| Type | Package | VRRM(V) | IO(A) | IFSM(A) | Trr(ns) | VF(V) | IR(uA) |
| ES2A | SMB | 50 | 2 | 50 | 35 | 0.95 | 5 |
| ES2B | SMB | 100 | 2 | 50 | 35 | 0.95 | 5 |
| ES2C | SMB | 150 | 2 | 50 | 35 | 0.95 | 5 |
| ES2D | SMB | 200 | 2 | 50 | 35 | 0.95 | 5 |
| ES2E | SMB | 300 | 2 | 50 | 35 | 1.25 | 5 |
| ES2G | SMB | 400 | 2 | 50 | 35 | 1.25 | 5 |
| ES2J | SMB | 600 | 2 | 50 | 35 | 1.7 | 5 |
| ER2A | SMB | 50 | 2 | 50 | 35 | 0.95 | 5 |
| ER2B | SMB | 100 | 2 | 50 | 35 | 0.95 | 5 |
| ER2C | SMB | 150 | 2 | 50 | 35 | 0.95 | 5 |
| ER2D | SMB | 200 | 2 | 50 | 35 | 0.95 | 5 |
| ER2E | SMB | 300 | 2 | 50 | 35 | 1.25 | 5 |
| ER2G | SMB | 400 | 2 | 50 | 35 | 1.25 | 5 |
| ER2J | SMB | 600 | 2 | 50 | 35 | 1.7 | 5 |
Fast recovery diode (FRD) is a kind of semiconductor diode with good switching characteristics and short reverse recovery time, which is mainly used in switching power supply, PWM pulse width modulator, inverter and other electronic circuits, as a high frequency rectifier diode, secondary diode or damping diode. The internal structure of fast recovery diode is different from ordinary p-junction diode. It belongs to PIN junction diode, that is, base region I is added between p-type silicon material and n-type silicon material to form PIN silicon chip. Because the base area is very thin and the reverse recovery charge is very small, the reverse recovery time of the fast recovery diode is short, the forward voltage drop is low, and the reverse breakdown voltage (withstand voltage value) is high.
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