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Fast Recovery Rectifier Diode ER2A ER2B ER2C ER2D ER2E ER2G ER2J DO-214AC SMA
Place of Origin | CHINA |
---|---|
Brand Name | THINKCHIP |
Model Number | ER2A ER2B ER2C ER2D ER2E ER2G ER2J |
Minimum Order Quantity | 100PCS |
Price | negotiable |
Packaging Details | Tape & Reel (TR) / Cut Tape (CT) |
Delivery Time | 1-2 WORK DAYS |
Payment Terms | T/T, Western Union,paypal, MoneyGram |
Supply Ability | 9,900,000 pcs/weekly |

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xIR(uA) | 5 | IO(A) | 2 |
---|---|---|---|
VF(V) | 0.95 | VRRM(V) | 50 |
IFSM(A) | 50 | Package | SMB |
Trr(ns) | 35 | TYPE | ER2A |
Highlight | fast recovery rectifier diode,high power rectifier diode |
ER2A ER2B ER2C ER2D ER2E ER2G ER2J Fast Recorvery Diode Fast Switching Diode DO-214AC SMA
Type | Package | VRRM(V) | IO(A) | IFSM(A) | Trr(ns) | VF(V) | IR(uA) |
ER2A | SMB | 50 | 2 | 50 | 35 | 0.95 | 5 |
ER2B | SMB | 100 | 2 | 50 | 35 | 0.95 | 5 |
ER2C | SMB | 150 | 2 | 50 | 35 | 0.95 | 5 |
ER2D | SMB | 200 | 2 | 50 | 35 | 0.95 | 5 |
ER2E | SMB | 300 | 2 | 50 | 35 | 1.25 | 5 |
ER2G | SMB | 400 | 2 | 50 | 35 | 1.25 | 5 |
ER2J | SMB | 600 | 2 | 50 | 35 | 1.7 | 5 |
ER1A | SMA | 50 | 1 | 30 | 35 | 0.95 | 5 |
ER1B | SMA | 100 | 1 | 30 | 35 | 0.95 | 5 |
ER1C | SMA | 150 | 1 | 30 | 35 | 0.95 | 5 |
ER1D | SMA | 200 | 1 | 30 | 35 | 0.95 | 5 |
ER1E | SMA | 300 | 1 | 30 | 35 | 1.25 | 5 |
ER1G | SMA | 400 | 1 | 30 | 35 | 1.25 | 5 |
ER1J | SMA | 600 | 1 | 30 | 35 | 1.7 | 5 |
ER3A | SMC | 50 | 3 | 100 | 35 | 0.95 | 5 |
ER3B | SMC | 100 | 3 | 100 | 35 | 0.95 | 5 |
ER3C | SMC | 150 | 3 | 100 | 35 | 0.95 | 5 |
ER3D | SMC | 200 | 3 | 100 | 35 | 0.95 | 5 |
ER3E | SMC | 300 | 3 | 100 | 35 | 1.25 | 5 |
ER3G | SMC | 400 | 3 | 100 | 35 | 1.25 | 5 |
ER3J | SMC | 600 | 3 | 100 | 35 | 1.7 | 5 |
Fast recovery diode (FRD) is a kind of semiconductor diode with good switching characteristics and short reverse recovery time, which is mainly used in switching power supply, PWM pulse width modulator, inverter and other electronic circuits, as a high frequency rectifier diode, secondary diode or damping diode. The internal structure of fast recovery diode is different from ordinary p-junction diode. It belongs to PIN junction diode, that is, base region I is added between p-type silicon material and n-type silicon material to form PIN silicon chip. Because the base area is very thin and the reverse recovery charge is very small, the reverse recovery time of the fast recovery diode is short, the forward voltage drop is low, and the reverse breakdown voltage (withstand voltage value) is high.
ER2A ER2B ER2C ER2D ER2E ER2G ER2J Product details