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TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor

  • TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor
Place of Origin Mexico
Brand Name IR/Thinkchip
Model Number GP4066D
Minimum Order Quantity 5PCS
Price negotiable
Packaging Details Tape & Reel (TR) / Cut Tape (CT)
Delivery Time 1-2 working days
Payment Terms T/T, Western Union,paypal,MoneyGram
Supply Ability 9,900,000 pcs

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Product Details
TYPE GP4066D Package TO-247
VCES 600V IC(Nominal) 90A
Highlight

n channel mosfet transistor

,

high voltage mosfet transistor
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Product Description

GP4066DPBF IRGP4066D GP4066D AUIRGP4066D1 IRGP4066 TO-247 90A 600V Power IGBT transistor


Contact us if you need more detail or quotation of these item. info@gr-ele.com
 
G-Resource Electronics Co., Ltd, as the preferred supplier of the world well-known enterprises, take strict quality control as the key to our success. G-Resource Electronics Co., Ltd has all along been committed to the "Zero Defect" quality management system and we have established a comprehensive quality management system, from supply chain management to single transaction monitoring, from suppliers grading system to quality inspection procedures. At the same time, we also has the excellent services of electronics field : Spot Buy Service; PPV Projects;BOM Kitting;Excess Liquidation;Value-Add Service;All-in-One Package Service. And also, we ensure the fast delivery of all our customers,we not only has closed cooperation relationship with international express :UPS,DHL,FEDEX,TNT ect but also has the great support of District logistics dedicated line.We confident that you will be satisfy with us once you start to cooperate with us. We stay here and waiting you to be our partner!
Pls kindly check the below part number of same series.

TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 0TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 1TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 2TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 3TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 4TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 5TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 6TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 7TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 8TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 9

 

Type Package Polarity PD(W) VDS(V) VGS(V) ID(A) RDS(Ω) VGS(th)(V)
AO3400 SOT-23 Single-N 1.4 30 12 5.8 0.028 1.45
AO3402 SOT-23 Single-N 1.4 30 12 4 0.052 1.5
AO3404 SOT-23 Single-N 1.4 30 12 4 0.052 1.5
AO3406 SOT-23 Single-N 1.4 30 20 3.6 0.05 2.5
AO3410 SOT-23 Single-N 1.4 30 12 5.8 0.028 1
AO3414 SOT-23 Single-N 1.4 20 8 3 0.062 1
AO3416 SOT-23 Single-N 1.4 20 8 6.5 0.022 1.1
AO3418 SOT-23 Single-N 1.4 30 12 3.8 0.055 1.5
AO3420 SOT-23 Single-N 1.4 20 12 6 0.024 1.1
AO3422 SOT-23 Single-N 1.4 55 12 2.1 0.16 2
AO3424 SOT-23 Single-N 1.4 30 12 3.8 0.055 1.5
AO3434 SOT-23 Single-N 1 30 20 3.5 0.052 1.8
AO3438 SOT-23 Single-N 1.4 20 8 3 0.062 1
AO3442 SOT-23 Single-N 1.4 100 20 1 0.63 2.9
AO3460 SOT-23 Single-N 1.4 60 20 0.65 1.7 2.5
AO3401 SOT-23 Single-P 1.4 -30 -12 -4 0.05 -1.3
AO3403 SOT-23 Single-P 1.4 -30 -12 -2.6 0.115 -1.4
AO3407 SOT-23 Single-P 1.4 -30 -20 -4.1 0.052 -2.4
AO3409 SOT-23 Single-P 1.4 -30 -20 -2.6 0.11 -2.4
AO3413 SOT-23 Single-P 1.4 -20 -8 -3 0.08 -1
AO3415 SOT-23 Single-P 1.5 -20 -8 -4 0.041 -0.9
AO3419 SOT-23 Single-P 1.4 -20 -12 -3.5 0.085 -1.2
AO3421 SOT-23 Single-P 1.4 -30 -20 -2.6 0.11 -2.4
AO3423 SOT-23 Single-P 1.4 -20 -12 -2 0.092 -1.2
AO3435 SOT-23 Single-P 1 -20 -8 -2.9 0.07 -1

 



TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 10TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 11

TO-247 90A 600V IGBT Transistor / Power Insulated Gate Bipolar Transistor 12

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n channel mosfet transistor

high voltage mosfet transistor

smd mosfet transistor