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RA07M3847M H46S RA07M3847M-501 High power gain MOS transistor

  • RA07M3847M H46S RA07M3847M-501 High power gain MOS transistor
  • RA07M3847M H46S RA07M3847M-501 High power gain MOS transistor
Place of Origin JAPAN
Brand Name MITSUBISHI
Model Number RA07M3847M-501
Minimum Order Quantity 10
Packaging Details 10*10*10
Delivery Time 2-3days
Payment Terms T/T, Western Union, MoneyGram
Supply Ability in stock

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Product Details
Encapsulation H46S
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Product Description

RA07M3847M H46S RA07M3847M-501 High power gain MOS transistor 0RA07M3847M H46S RA07M3847M-501 High power gain MOS transistor 1RA07M3847M H46S RA07M3847M-501 High power gain MOS transistor 2

 

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