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BC847B Bipolar Bjt Npn Pnp Transistor BC847A BC847C 45V 100mA Surface Mount SOT-23

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xCurrent | 100mA | Name | NPN Bipolar Junction Transistor |
---|---|---|---|
Vce Saturation | 600mV @ 5mA, 100mA | Voltage | 45V |
Power - Max | 250mW | Frequency - Transition | 100MHz |
Highlight | smd npn transistor,silicon npn power transistors |
BC847B Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250mW Surface Mount SOT-23-3
Bipolar (BJT) Transistor Description
There are two Types of BJT: npn and pnp. The npn Type consists of two n-Regions separated by a p-Region. The pnp Type consists of two p-Regions separated by an n-Region. Bipolar Junction Transistor (BJT) is a Semiconductor device constructed with three doped Semiconductor Regions (Base, Collector and Emitter) separated by two p-n Junctions . The p-n Junction between the Base and the Emitter has a Barrier Voltage (V0) of about 0.6 V, which is an important parameter of a BJT. Unlike the Field Effect Transistor (FET), in which Current is produced only by one type of Charge Carrier (Electrons or Holes), in BJT, Current is produced by both types of Charge Carriers (Electrons and Holes), hence the name Bipolar.
BC847B Specification
Manufacturer | NXP/LRC/ThinkChip |
Series | - |
Packaging | Cut Tape (CT) |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
Power - Max | 250mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Base Part Number | BC847B |
Service
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