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BSM25GD120DN2 High Voltage Igbt Full Bridge 1200V 35A 200W Chassis Mount

  • BSM25GD120DN2 High Voltage Igbt Full Bridge 1200V 35A 200W Chassis Mount
Place of Origin Japan
Brand Name Infineon
Model Number BSM25GD120DN2
Minimum Order Quantity 1 Pcs
Price negotiable
Packaging Details Module with Box
Delivery Time 1-2 working days
Payment Terms T/T, Western Union,paypal
Supply Ability 20 PCS

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Product Details
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insulated gate bipolar transistor

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high voltage igbt
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Product Description
Manufacturer Infineon Technologies
Series -
Part Status Not For New Designs
IGBT Type -
Configuration Full Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Power - Max 200W
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A
Current - Collector Cutoff (Max) 800µA
Input Capacitance (Cies) @ Vce 1.65nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Tags:

high voltage igbt

insulated gate bipolar transistor

high current igbt